bipolarics, inc. part number BPT1819E12 npn silicon microwave power transistors description and applications: bipolarics' BPT1819E12 is a high performance silicon bipolar transistor intended for linear power applications at frequencies of 1.8 to 1.9 ghz. typical applications include amplifiers in aeronautical, maritime and personal communication applications. the BPT1819E12 is bonded common emitter for linear applications. linear output power of 12 watts can be achieved. beo flange packaging makes this device excellent for industrial and military products. uniformity and reliability are assured by the use of ion implanted junctions, ion implanted ballast resistors and gold metallization. absolute maximum ratings: symbol parameters rating units v ces collector-base voltage 40 v v ceo collector-emitter voltage 20 v v ebo emitter-base voltage 3.0 v i c collector current 3. 84 a t j junction temperature 200 o c t stg storage temperature -65 to 200 o c jc thermal resistance 4.5 c/w v ce = 8.0v, i c = 1.2 a i e = 0 p t total power dissipation w 36 v ce = 15v, i c = 1. 92 a, class a,common emitter unless stated symbol parameters & conditions unit min. typ. max. product data sheet features: ? high output power 12 w @ 1.8 ghz ? high gain bandwidth product f t = 6.0 ghz typ @ i c = 1. 92 a ? high gain g pe = 9.0 db @ 1.8 ghz ? gold metallization system ? high thermal efficiency beo 6 lead flange package (package 36) performance data: electrical characteristics (t a = 25 o c) bv ceo collector-emitter breakdown voltage i c = 0.1 ma v 20 p 1db output power at 1db compression f = 1.8 ghz w 12.0 g pe class a p out = 12 w f = 1.8 ghz db 9.0 efficiency: class a % 30 class c 65 h fe forward current transfer ratio: f = 1.0 mhz 20 60 100 c cb collector base capacitance: f = 1.0 mhz pf 24.0
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